產(chǎn)品分類
氧化/擴(kuò)散合金爐管設(shè)備
所屬分類：
第一代半導(dǎo)體工藝設(shè)備
概要：
? 該設(shè)備是半導(dǎo)體生產(chǎn)線前工序的重要工藝設(shè)備之一，用于大規(guī)模集成電路、分立器件、電力電子、光電器件等行業(yè)的擴(kuò)散、氧化、退火、合金和燒結(jié)等工藝 ? 設(shè)計(jì)了硅片生產(chǎn)的多種工藝性能需要，具有生長(zhǎng)效率高、產(chǎn)品性能優(yōu)越的特點(diǎn) ? 具有污染低、占地面積小、溫度均勻、可裝載晶圓尺寸大、工藝穩(wěn)定性高等優(yōu)點(diǎn) ? 主要用于初始氧化層、屏蔽氧化層、襯墊氧化層、犧牲氧化層、場(chǎng)氧化層等多種氧化介質(zhì)層的制備工藝
關(guān)鍵詞：
氧化/擴(kuò)散
氧化/擴(kuò)散合金爐管設(shè)備
產(chǎn)品概述/Product Introduction：
♦ 該設(shè)備是半導(dǎo)體生產(chǎn)線前工序的重要工藝設(shè)備之一，用于大規(guī)模集成電路、分立器件、電力電子、光電器件等行業(yè)的擴(kuò)散、氧化、退火、合金和燒結(jié)等工藝
This equipment is one of the important process equipments in the front process of semiconductor production line, which is used for diffusion, oxidation, annealing, alloying and sintering in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices.
♦ 設(shè)計(jì)了硅片生產(chǎn)的多種工藝性能需要，具有生長(zhǎng)效率高、產(chǎn)品性能優(yōu)越的特點(diǎn)
The design takes into account various process performance requirements of silicon wafer production, and has the characteristics of high growth efficiency and superior product performance.
♦ 具有污染低、占地面積小、溫度均勻、可裝載晶圓尺寸大、工藝穩(wěn)定性高等優(yōu)點(diǎn)
It has the advantages oflow pollution, small occupied area, uniform temperature, large wafer size and high process stabili-
♦ 主要用于初始氧化層、屏蔽氧化層、襯墊氧化層、犧牲氧化層、場(chǎng)氧化層等多種氧化介質(zhì)層的制備工藝
Mainly used in the preparation process of various oxidation dielectric layers such as initial oxide layer, shielding oxide layer, gasket oxide layer, sacrificial oxide layer and field oxide layer.
產(chǎn)品特點(diǎn)/Product characteristics：
♦ 高潔凈度:包括材料、工藝環(huán)境等
High cleanliness: including materials, process environment, etc.
♦ 高精度:包括爐內(nèi)溫度、進(jìn)流量、排氣壓力、運(yùn)動(dòng)控制等
High precision: including furmace temperature, inlet flow, exhaust pressure, motion control, etc
♦ 高安全性:包括氣體泄漏檢測(cè)、氣流檢測(cè)、人機(jī)互鎖等
High safety: including gas leakage detection, airflow detection, man- machine interlocking, etc
技術(shù)指標(biāo)/Technical Indicators：
|
晶片類型: 6/8/12英寸晶圓 Wafer type: 6/8/12 inch wafer |
工作溫度范圍: 800°C-1250°C Operating temperature range: 800°C-1250°C |
|
恒溫區(qū)長(zhǎng)度:≥860mm Length of constant temperature zone:≥860mm |
可根據(jù)客戶要求定制產(chǎn)品 Customized products can be made according to customer requirements |
應(yīng)用范圍/Scope：
♦ 廣泛用于半導(dǎo)體材料的氧化處理，也可用于推阱、退火、合金、摻雜等工藝
It is widely used in oxidation treatment of semiconductor materials, and can also be used in well pushing, annealing, alloying, doping and other processes.
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